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| NSS1C200LT1G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. * This is a Pb-Free Device MAXIMUM RATINGS (TA = 25C) Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current - Continuous Collector Current - Peak Symbol VCEO VCBO VEBO IC ICM Max -100 -140 -7.0 -2.0 -3.0 Unit Vdc Vdc Vdc A A 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 3 http://onsemi.com -100 VOLTS, 3.0 AMPS PNP LOW VCE(sat) TRANSISTOR COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range Symbol PD (Note 1) Max 490 3.7 RqJA (Note 1) PD (Note 2) 255 710 4.3 RqJA (Note 2) TJ, Tstg 176 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING VL MG G 1 VL = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR- 4 @ 100 mm2, 1 oz. copper traces. 2. FR- 4 @ 500 mm2, 1 oz. copper traces. ORDERING INFORMATION Device NSS1C200LT1G Package SOT-23 (Pb-Free) Shipping 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2008 1 March, 2008 - Rev. 0 Publication Order Number: NSS1C200L/D NSS1C200LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = -140 Vdc, IE = 0) Emitter Cutoff Current (VEB = -6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = -10 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = -2.0 A, VCE = -2.0 V) Collector - Emitter Saturation Voltage (Note 3) (IC = -0.1 A, IB = -0.01 A) (IC = -0.5 A, IB = -0.05 A) (IC = -1.0 A, IB = -0.100 A) (IC = -2.0 A, IB = -0.200 A) Base - Emitter Saturation Voltage (Note 3) (IC = -1.0 A, IB = -0.100 A) Base - Emitter Turn-on Voltage (Note 3) (IC = -1.0 A, VCE = -2.0 V) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) Input Capacitance (VEB = 2.0 V, f = 1.0 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. 0.60 PD, POWER DISSIPATION (W) 0.50 Note 2 0.40 0.30 0.20 0.10 0 0 20 40 60 80 100 120 140 160 TJ, TEMPERATURE (C) Note 1 hFE 150 120 80 50 VCE(sat) -0.040 -0.080 -0.115 -0.250 VBE(sat) -0.950 VBE(on) -0.850 fT 120 Cibo Cobo 200 22 pF pF MHz V V 240 360 V(BR)CEO -100 V(BR)CBO -140 V(BR)EBO -7.0 ICBO -100 IEBO -50 nAdc nAdc Vdc Vdc Vdc Symbol Min Typ Max Unit V Figure 1. Power Derating http://onsemi.com 2 NSS1C200LT1G 500 VCE = 2 V 400 DC, CURRENT GAIN 150C DC, CURRENT GAIN 150C 400 500 VCE = 4 V 300 25C 300 25C 200 -55C 100 200 -55C 100 0 0.001 0.01 0.1 1 10 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) 1 VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) 1 Figure 3. DC Current Gain 0.1 150C 25C 0.1 25C 150C -55C -55C 0.01 0.001 0.01 0.1 1 IC/IB = 10 10 0.01 0.001 IC/IB = 50 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Collector-Emitter Saturation Voltage Figure 5. Collector-Emitter Saturation Voltage VBE(sat), BASE-EMITTER VOLTAGE (V) VBE(sat), BASE-EMITTER VOLTAGE (V) 1.2 1.0 -55C 0.8 0.6 150C 0.4 0.2 IC/IB = 10 0 0.001 0.01 0.1 1 10 25C 1.2 1.0 -55C 0.8 0.6 150C 0.4 0.2 IC/IB = 50 0 0.001 0.01 0.1 1 10 25C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Base-Emitter Saturation Voltage Figure 7. Base-Emitter Saturation Voltage http://onsemi.com 3 NSS1C200LT1G VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) 1.0 VBE(on), BASE-EMITTER VOLTAGE (V) -55C 25C 0.6 150C 1.00 TJ = 25C 3A 2A 1A 0.10 0.5 A 0.8 0.4 0.2 VCE = 2 V 0 0.001 0.01 0.1 1 10 IC = 0.1 A 0.01 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 IB, BASE CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 8. Base-Emitter Saturation Voltage Figure 9. Collector Saturation Region 400 COBO, OUTPUT CAPACITANCE (pF) CIBO, INPUT CAPACITANCE (pF) TJ = 25C fTEST = 1 MHz 300 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 VCB, COLLECTOR BASE VOLTAGE (V) TJ = 25C fTEST = 1 MHz 200 100 0 0 1 2 3 4 5 6 7 8 VCE, EMITTER BASE VOLTAGE (V) Figure 10. Input Capacitance Figure 11. Output Capacitance fTau, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 140 120 100 80 60 40 20 0 0.001 TJ = 25C fTEST = 1 MHz VCE = 10 V 10 10 ms IC, COLLECTOR CURRENT (A) 1 ms 100 ms 1 0.1 Thermal Limit 0.01 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 Figure 12. Current-Gain Bandwidth Product Figure 13. http://onsemi.com 4 NSS1C200LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 D SEE VIEW C 3 E HE c 1 2 b e q A L A1 L1 VIEW C 0.25 DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P Box 5163, Denver, Colorado 80217 USA .O. Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NSS1C200L/D |
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